Published July 1982
| Version v1
Journal article
States, density and conductivity of a doped semiconductor at intermediate concentrations
Creators
- 1. Universidade Federal Fluminense, Niteroi (Brazil). Inst. de Fisica
Description
no abstract available
Additional details
Additional titles
- Original title (Portuguese)
- Densidade de estados e condutividade de um semicondutor dopado a concentracoes intermediarias
Publishing Information
- Journal Title
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Volume
- 34
- Journal Issue
- 7
- Series
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Page Range
- 311
Conference
- Title
- 34. Annual Meeting of the Brazilian Society for the Advancement of Science.
- Dates
- 6 - 14 Jul 1982.
- Place
- Campinas, SP (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 14739149
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ENERGY-LEVEL DENSITY; GREEN FUNCTION; HAMILTONIANS; PHOSPHORUS; SEMICONDUCTOR MATERIALS; SILICON ADDITIONS
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; FUNCTIONS; MATERIALS; MATHEMATICAL OPERATORS; NONMETALS; PHYSICAL PROPERTIES; QUANTUM OPERATORS
Optional Information
- Notes
- Published in summary form only.