Published December 1, 2018 | Version v1
Journal article

Vibrational properties of GaSe: a layer dependent study from experiments to theory

  • 1. Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz (Germany)
  • 2. Dept. of Physics, University of Rome, Tor Vergata Via della Ricerca Scientifica 1, I-00133 Rome (Italy)
  • 3. Laboratorio de Fisica Aplicada, Universidad de Los Andes, Merida 05101 (Venezuela, Bolivarian Republic of)
  • 4. IFTO, Friedrich Schiller Universität, Max Wien Platz 1, D-07743 Jena (Germany)

Description

We report on Raman scattering of GaSe for thicknesses varying from bulk down to bilayer. The Raman spectra using 532 nm excitation show a strong dependence on layer thickness. The two out-of-plane modes of GaSe shift in opposite directions as the thickness increases. However, from pentalayer the Raman spectra of GaSe do not show any further change thus reaching bulk nature in terms of optical properties. We also perform ab initio density functional theory calculations for the geometry, the electronic band structure, and the Raman frequencies for bulk down to one monolayer. Good agreement with the experimental results is found, and we reproduce the trend, driven by the number of layers, in the Raman shifts. Our results present the first systematic approach to a layer dependent Raman study of GaSe and answer contradictions reported in the literature. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6641/aae4c7

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
33
Journal Issue
12
Journal Page Range
[7 p.]
ISSN
0268-1242
CODEN
SSTEET