Published January 2009
| Version v1
Journal article
Transmission of hot electrons through a metal-semiconductor interface
Creators
- 1. Orel State Engineering University (Russian Federation)
Description
The expression for the current density of the chemical electron emission from a metal film into a semiconductor is obtained. The dependences of the probability for transmission of hot electrons through the metal-semiconductor interface on the average hot-electron energy, temperature, and electric-field strength are obtained. The conditions at which the probability for transmission of hot electrons through the interface is almost equal to unity are established.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 43
- Journal Issue
- 1
- Journal Page Range
- p. 42-46
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41011281
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CURRENT DENSITY; ELECTRIC FIELDS; ELECTRON EMISSION; ELECTRONS; FILMS; INTERFACES; METALS; PROBABILITY; SEMICONDUCTOR MATERIALS; TRANSMISSION
- Descriptors DEC
- ELEMENTARY PARTICLES; ELEMENTS; EMISSION; FERMIONS; LEPTONS; MATERIALS
Optional Information
- Copyright
- Copyright (c) 2009 Pleiades Publishing, Ltd.