Published 1990 | Version v1
Book

Preparation of thin-film oxide superconductor, Y1Ba2Cu3O7-δ by facing-targets sputtering deposition

Creators

  • 1. R and D Lab. 1, Nippon Steel Corp., 1618 Ida, Nakahara-ku, Kawasaki 211 (Japan)

Description

Thin-film oxide superconductor, Y1Ba2Cu3O7-δ was prepared onto single-crystal MgO (100) substrates by facing-targets sputtering (FTS) deposition technique. Throughout the various preparation conditions, little deviation of the compositional ratios of the metallic elements in the as-prepared films from those of the targets: i.e. Y:Ba:Cu = 1:2:3 was observed. The atomic structures and properties of the superconductivity of the as-prepared films largely depended on the substrate temperature, Ts. They were classified as the following five regions. Region I: 720 degrees C > Ts > 670 degrees C. The films had c-axis oriented Y1Ba2Cu3O7-δ structure having Tc0 > 70 K. Region II: 670 degrees C > Ts > 630 degrees C and 770 degrees C > Ts > 720 degrees C. The polycrystalline Y1Ba2Cu3O7-δ having Tc0 ∼ 40 K was observed. Region III: 800 degrees C > Ts > 770 degrees C and 530 degrees C > Ts > 400 degrees C. A different crystalline structure having ca. 1/3 periodicities of the c-axis length of Y1Ba2Cu3O7-δ appeared. It had semiconductor-like temperature dependence of the electric resistivity. Region IV: 630 degrees C > Ts > 530 degrees C. A transition region between Regions I and III. The polycrystalline Y1Ba2Cu3O7-δ and the 1/3 periodicity structures coexisted. Region V: 400 degrees C > Ts > R.T. The films were amorphous and electrically insulating. In this paper the dependence of the structure on Ts is explained by two factors which govern the crystal growth process

Additional details

Publishing Information

Publisher
SPIE Society of Photo-Optical Instrumentation Engineers.
Imprint Place
Bellingham, WA (United States)
ISBN
0-8194-0338-5
Imprint Title
High T_c superconductivity: Thin films and applications
Imprint Pagination
220 p.
Journal Page Range
p. 16-29.

Conference

Title
physics toward device applications.
Acronym
Society of Photo-Optical Instrumentation Engineers (SPIE) symposium on advances in semiconductors and superconductors
Dates
17-21 Mar 1990.
Place
San Diego, CA (United States).

Optional Information

Secondary number(s)
CONF-900302--.