Published February 1972
| Version v1
Journal article
Activation analysis of trace impurities in silicon single crystals and in thin layers of SiO2 and Si3N4 on silicon
Creators
- 1. Tesla, Prague (Czechoslovakia). Vyzkumny Ustav pro Sdelovaci Techniku
- 2. Ustav Jaderneho Vyzkumu, Rez (Czechoslovakia)
Description
no abstract available
Additional details
Additional titles
- Original title (Czech)
- Aktivacni analyza stopovych necistot v monokrystalickem kremiku a v tenkych vrstvach SiO
Publishing Information
- Journal Title
- Radioisotopy
- Journal Volume
- 13
- Journal Issue
- 2
- Series
- Radioisotopy.
- Journal Page Range
- 253-264
INIS
- Country of Publication
- Serbia and Montenegro
- Country of Input or Organization
- Serbia and Montenegro
- INIS RN
- 4050120
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Is Lead record
- Yes
- Descriptors DEI
- ACCURACY; ACTIVATION ANALYSIS; IMPURITIES; MONOCRYSTALS; PILE NEUTRONS; QUARTZ; SAMPLE PREPARATION; SILICON; SILICON NITRIDES; TRACE AMOUNTS
- Descriptors DEC
- BARYONS; CHEMICAL ANALYSIS; CRYSTALS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; NEUTRONS; NITRIDES; NUCLEONS; OXIDES; SEMIMETALS; SILICON COMPOUNDS; SILICON OXIDES
Optional Information
- Notes
- 16 refs.