Published December 1998
| Version v1
Journal article
Total dose effects on gate controlled lateral PNP bipolar junction transistors
- 1. Univ. of Bordeaux 1, Talence (France). Lab. IXL
Description
A gate controlled lateral PNP bipolar device has been designed in a commercial BiCMOS process to investigate its sensitivity to radiation-induced degradation. New experimental and simulated results concerning total dose effects are presented. The improved radiation hardness of this device working in its accumulation mode is shown. The influence of the gate potential during irradiation is studied as well as the effect of the gate potential on the degraded current characteristics
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 45
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 2577-2583
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- IEEE nuclear and space radiation effects conference
- Dates
- 20-24 Jul 1998
- Place
- Newport Beach, CA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30034814
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC CURRENTS; ELECTRIC POTENTIAL; IONIZING RADIATIONS; JUNCTION TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SENSITIVITY
- Descriptors DEC
- CURRENTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-980705--