Defects induced by fast neutron irradiation in GaAs
- 1. Academia Sinica, Beijing, BJ (China). Inst. of Atomic Energy
- 2. Beijing General Research Inst. for Non-ferrous Metals, Beijing (China)
Description
Defects induced by 5 and 9.5 MeV fast neutron irradiations in N-type HB single crystal GaAs are studied by the positron annihilation lifetime technique. Mono-and di-vacancies are created for the neutron irradiation to a fluence of 1013 n/cm2 and only mono-vacancies are produced for the neutron irradiation to a fluence of 1011∼1012 n/cm2. It is found that the higher the irradiating neutron energy and fluence, the higher the intensity of the produced defects. As a result the defect production rate becomes increasingly more sensitive to the neutron fluence than to the neutron energy. The annealing behavior of the defects is also investigated up to 750 degree C. Tri-vacancies are formed between 450 and 620 degree C in GaAs irradiated to 1013 n/cm2 by 9.5 MeV neutrons. Three annealing stages are observed for the mono-, di- and tri- vacancies
Additional details
Publishing Information
- Journal Title
- Chinese Journal of Nuclear Physics
- Journal Volume
- 18
- Journal Issue
- 4
- Journal Page Range
- p. 231-235.
- ISSN
- 1001-6031
- CODEN
- YTHLDS
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 28046529
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANNIHILATION; CRYSTAL DEFECTS; ENERGY DEPENDENCE; FAST NEUTRONS; GALLIUM ARSENIDES; IRRADIATION; LIFETIME; MEV RANGE 01-10; NEUTRON FLUENCE; POSITRONS; VACANCIES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; GALLIUM COMPOUNDS; HADRONS; HEAT TREATMENTS; INTERACTIONS; LEPTONS; MATTER; MEV RANGE; NEUTRONS; NUCLEONS; PARTICLE INTERACTIONS; PNICTIDES; POINT DEFECTS