Self-Powered broadband photodetection of copper phthalocyanine by enhancing photogating effect with monolayer MoS2 flakes
Creators
- 1. Emerging Nanoelectronic Devices Research Laboratory (eNDR Lab), School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram (IISER TVM), Maruthamala PO, Vithura, Thiruvananthapuram 695551, Kerala (India)
Description
Highlights: • Demonstrated lithography free device fabrication using monolayer MoS2 flakes. • Laterally staggered type-II heterojunctions formed by embedding MoS2 in CuPc film. • Interfacial built-in potential in MoS2:CuPc results easy exciton dissociation. • MoS2 as charged puddles enhanced the photogating effect largely by capturing electrons. • Finally, self-powered broadband photodetection of MoS2:CuPc hybrid demonstrated. Here, we demonstrated a self-powered broadband photodetector using thermal CVD-grown in situ monolayer MoS2 flakes embedded below a solution-coated copper phthalocyanine (CuPc) layer. Lateral heterojunction with type-II staggered band-alignment between MoS2 and CuPc produces an interfacial built-in potential, enabling self-powered operation. Interestingly, a distinct phenomenon, which can be termed as spontaneous photogating, is identified that looks different from standard one based on charge trapping at defects and dielectric-interface. Mostly, exciton dissociated electrons were confined in MoS2 and form charged-puddles below CuPc layer as evidenced with Raman scattering results, which strongly modulates the optoelectronic property of MoS2/CuPc lateral-heterojunctions device. Eventually, CuPc itself is doped heavily with photo-generated holes under favourable energy-band alignment, which enhances overall photoconductivity. Hence, MoS2/CuPc photodetectors depict superior UV–Vis-NIR broadband photoresponse with 90% EQE at 1100 nm. We also achieved a responsivity and detectivity of about 0.7 A/W and ~ 1011 Jones, respectively, with a response speed of about 50 ms. This faster device response with self-powered operation is the main advantage compared with usual photogating based devices. Finally, the strategy proposed here will broaden the utilization of various TMDs without using sophisticated tools that significantly reduces the fabrication cost, processing time, and overall environmental hazards.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2021.150818Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2021.150818;
- PII
- S0169433221018821;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 568
- Journal Page Range
- vp.
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54078363
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COPPER COMPLEXES; DOPED MATERIALS; MOLYBDENUM SULFIDES; PHTHALOCYANINES; RAMAN EFFECT
- Descriptors DEC
- CHALCOGENIDES; COMPLEXES; DYES; HETEROCYCLIC COMPOUNDS; MATERIALS; MOLYBDENUM COMPOUNDS; ORGANIC COMPOUNDS; REFRACTORY METAL COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPLEXES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2021 Elsevier B.V. All rights reserved.