Published December 2006 | Version v1
Journal article

Surface wave photonic device based on porous silicon multilayers

  • 1. LPM Laboratoire de Physique de la Matiere, UMR CNRS 5511, INSA de Lyon, Batiment Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, Cedex (France)

Description

Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p+-type silicon. Morphological and optical characterizations of the realized structures are reported

Additional details

Identifiers

DOI
10.1016/j.jlumin.2006.08.069;
PII
S0022-2313(06)00574-6;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
121
Journal Issue
2
Journal Page Range
p. 319-321
ISSN
0022-2313
CODEN
JLUMA8

Conference

Title
Symposium D, Silicon-based photonics
Acronym
E-MRS 2006
Dates
29 May - 2 Jun 2006
Place
Nice (France)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38034718
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
APPROXIMATIONS; CRYSTALS; ETCHING; OPTICAL PROPERTIES; POROUS MATERIALS; SILICON
Descriptors DEC
CALCULATION METHODS; ELEMENTS; MATERIALS; PHYSICAL PROPERTIES; SEMIMETALS; SURFACE FINISHING

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.