Published December 2006
| Version v1
Journal article
Surface wave photonic device based on porous silicon multilayers
Creators
- 1. LPM Laboratoire de Physique de la Matiere, UMR CNRS 5511, INSA de Lyon, Batiment Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, Cedex (France)
Description
Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p+-type silicon. Morphological and optical characterizations of the realized structures are reported
Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2006.08.069;
- PII
- S0022-2313(06)00574-6;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 121
- Journal Issue
- 2
- Journal Page Range
- p. 319-321
- ISSN
- 0022-2313
- CODEN
- JLUMA8
Conference
- Title
- Symposium D, Silicon-based photonics
- Acronym
- E-MRS 2006
- Dates
- 29 May - 2 Jun 2006
- Place
- Nice (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38034718
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- APPROXIMATIONS; CRYSTALS; ETCHING; OPTICAL PROPERTIES; POROUS MATERIALS; SILICON
- Descriptors DEC
- CALCULATION METHODS; ELEMENTS; MATERIALS; PHYSICAL PROPERTIES; SEMIMETALS; SURFACE FINISHING
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.