Published December 15, 2003 | Version v1
Journal article

Growth and characteristics of (TbBi)3(FeAlGa)5O12 and (EuBi)3(FeAlGa)5O12 garnet single crystal thick films

Description

The single crystalline thick films of (TbBi)3(FeAlGa)5O12 (TbIG) and (EuBi)3(FeAlGa)5O12 (EuIG) garnet single crystal thick films were grown on (GdCa)3(GaMgZr)5O12 (SGGG) substrate by liquid phase epitaxy (LPE). The lattice constant and lattice mismatch of TbIG were 12.507 A and 118.8 arcsec and those of EuIG were 12.489 A and 75.6 arcsec (SGGG=12.496 A), respectively. The magnetic-domain could be observed in the EuIG film after the removal of the magnetic field. The Bi-substitution level of the TbIG films was increased as compared to the EuIG films. Also saturation magnetization of TbIG and EuIG films get 150 and 950 Oe, respectively

Additional details

Identifiers

DOI
10.1016/j.mseb.2003.08.014;
PII
S0921510703003684;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
105
Journal Issue
1-3
Journal Page Range
p. 47-51
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
Rare earth doped materials for photonics
Acronym
EMRS 2003 Symposium J
Dates
10-13 Jun 2003
Place
Strasbourg (France)

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.