Investigation and simulation of doping profiles at boron ion implantation in monocrystal silicon in the wide range of concentration

The process of ion doping of silicon monocrystal plates with <100> and <111> orientation is investigated by the secondary-ion mass-spectroscopy method. Data allowing to simulate 11B interstitial ion distribution in depth by Pierson distribution with four moments are obtained on the basis of experimental curve processing. At zero approximation the values of moments are calculated by the distributions based on the experimental curves. Further fit is carried out by the method of minimization of root-mean-square deviation. The values of moments calculated are shown to provide approximation of impurity distribution in the dynamic range for not less than four decades, and the deviation from the calculated curve throughout the whole range is not more than 30%. The value of asymmetry of the boron profile in case of <111> orientation is established to be more than in case of <100> orientation, that is expressed in more flattened form of the depth part of the profile. Implantation carried out under different angles in respect of perpendicular to the surface (0-7 deg) has shown that contribution of the ''peak'', caused by the effect of channelling at implantation under 7 deg angle, is insignificant and doesn't lead to a great error of approximation