Published June 1, 2007 | Version v1
Journal article

Computer simulation of Nb-doping PBWO4 crystal

  • 1. College of Science, University of Shanghai for Science and Technology, Shanghai 200093 (China)

Description

The existing forms of the impurity Nb5+ ions in the Nb:PWO crystals are simulated by the computer simulation technology. The various kinds of defects and substitution reactions in the Nb:PWO crystals are also simulated. By analyzing the calculated results of defect formation energies and solution energies, the optimal positions of the Nb5+ ions and the charge compensating mechanism [NbO3+VO]+-[NbO4]- in the Nb:PWO crystals are obtained; this charge compensating mechanism change the compensating form of oxygen vacancies which relates to 350 nm absorption band, then the 350 nm absorption band is depressed

Additional details

Identifiers

DOI
10.1016/j.nima.2007.02.077;
PII
S0168-9002(07)00412-3;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
575
Journal Issue
3
Journal Page Range
p. 390-394
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.