Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

The electrical properties of highly rectifying semimetal-graphite Schottky contacts fabricated by printing colloid graphite on n-type InP and GaN are investigated as a function of annealing temperature by current–voltage and capacitance–voltage techniques. As-deposited Schottky diodes exhibit excellent current–voltage rectifying characteristics of 7.5 × 107 and 1.9 × 1011 with Schottky barrier height of 1.13 and 1.29 eV at room temperature for InP and GaN, respectively. The key aspect of this technique, compared with conventional vacuum evaporation, is low deposition energy process, leaving the surface undisturbed. (paper)