Published May 2018
| Version v1
Journal article
Ion Synthesis: Si–Ge Quantum Dots
Creators
- 1. National Research University of Electronic Technology (Russian Federation)
- 2. Angstrrem (Russian Federation)
- 3. Angstrem-T (Russian Federation)
- 4. P.N. Lebedev Physical Institute of the RAS (Russian Federation)
Description
We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 1014 to 1017 cm–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 52
- Journal Issue
- 5
- Journal Page Range
- p. 625-627
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49100937
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ION BEAMS; KEV RANGE; QUANTUM DOTS; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- BEAMS; ENERGY RANGE; NANOSTRUCTURES; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2018 Pleiades Publishing, Ltd.