High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer
- 1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-0033 (Japan)
- 2. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
- 3. Nanophotonics Research Center, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Description
We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p+-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ∼700 K for a low input electrical power density of 0.4 W/cm2, while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.
Additional details
Identifiers
- DOI
- 10.1063/1.4895700;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 116
- Journal Issue
- 11
- Journal Page Range
- p. 113905-113905.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46012175
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARRIERS; DOPED MATERIALS; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRON TEMPERATURE; EV RANGE; GALLIUM ARSENIDES; HOLES; LAYERS; MANGANESE ADDITIONS; POWER DENSITY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SPECTRA; TEMPERATURE RANGE 0273-0400 K; TUNNEL DIODES; TUNNEL EFFECT; VISIBLE RADIATION
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY RANGE; EQUIPMENT; GALLIUM COMPOUNDS; LUMINESCENCE; MANGANESE ALLOYS; MATERIALS; PHOTON EMISSION; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC