Photoluminescence and electrical measurements on manganese ion-implanted GaAs

Photoluminescence (PL) and electrical properties of implanted manganese ions in GaAs are reported. Mn can be introduced into Ga site by ion implantation followed by annealing at a temperature above 6000C. The intensity of the Mn emission line increases between 600 and 8000C. The highest PL intensity and the maximum carrier concentration are obtained at the same dose, about 1x1015 cm-2, where the carrier concentration is almost the same at the maximum value that has been reported in the melt-grown or epitaxial GaAs. Anomalous diffusion of implanted Mn in GaAs annealed at 8000C is found from the measurement of the PL intensity profile. The diffusion of implanted Mn in GaAs is suppressed when an amorphous layer has been formed and the interstitial-substitutional diffusion model provides the best qualitative explanation for this suppression phenomenon. (auth.)