Growth and composition-dependent optoelectronic properties of Al x Ga 1− x N alloy nanowires arrays across the entire composition range on carbon cloth

Composition-tunable ternary Al _x Ga_{1− x} N (0 ≤ x ≤ 1) alloy nanowires have been grown on flexible carbon cloth in large scale through a one-step and catalyst-free chemical vapor deposition method. Field emission scanning electron microscopy, x-ray diffraction analysis, transmission electron microscopy and x-ray energy-dispersive spectroscopy were employed to characterize the morphology, crystal structure, composition properties. All Al _x Ga_{1− x} N samples exhibit hexagonal wurtzite single-phase structure and a preferred orientation along [0001] direction. The progressively evolutions in structural, Raman and field emission properties of Al _x Ga_{1− x} N nanowires demonstrate the continuous composition tunability across the entire composition range. The enhancement in the field emission characteristic of Al _x Ga_{1− x} N nanowires on carbon cloth is ascribed to the combined effect of the nanostructures and the excellent electron transport path of the conductive carbon cloth. The successful synthesis of Al _x Ga_{1− x} N nanowires on carbon cloth provides the new possibility for the further development of flexible nano- and opto-electronic devices. (paper)