A high-quality factor of 267 000 micromechanical silicon resonator utilizing TED-free torsional vibration mode
Creators
- 1. Device Module Development Center, Panasonic Corporation, 1006 Kadoma, Kadoma City, Osaka (Japan)
- 2. Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo (Japan)
Description
In industrial applications of a micromechanical silicon resonator as a physical sensor, a high-quality factor Q and a low-temperature coefficient of Q (TCQ) are required for high sensitivity in a wide temperature range. Although the newly developed thin film encapsulation technique enables a beam to operate with low viscous damping in a vacuum cavity, the Q of a flexural vibration mode is limited by thermo-elastic damping (TED). We proposed a torsional beam resonator which features both a high Q and a low TCQ because theoretically the torsional vibration mode does not suffer from TED. From experiments, Q of 267 000 and TCQ of 1.4 for the 20 MHz torsional vibration mode were observed which were superior to those of the flexural mode. The pressure of the residual gas in the cavity of only 20 pl volume, which is one of the energy loss factors limiting the Q, was successfully estimated to be 1–14 Pa. Finally, the possibilities of improving the Q and the difference of the measured TCQ from a theoretical value were discussed. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0960-1317/22/12/125028Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Micromechanics and Microengineering. Structures, Devices and Systems
- Journal Volume
- 22
- Journal Issue
- 12
- Journal Page Range
- [7 p.]
- ISSN
- 0960-1317
- CODEN
- JMMIEZ
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47014143
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BEAMS; CRYSTAL DEFECTS; DAMPING; ELASTICITY; ENCAPSULATION; ENERGY LOSSES; MHZ RANGE 01-100; OSCILLATION MODES; QUALITY FACTOR; RESONATORS; SENSITIVITY; SENSORS; SILICON; TEMPERATURE RANGE 0065-0273 K; THIN FILMS
- Descriptors DEC
- CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; FREQUENCY RANGE; LOSSES; MECHANICAL PROPERTIES; MHZ RANGE; SEMIMETALS; TEMPERATURE RANGE