Microstructures and impedance studies of Bi3.15Nd0.85Ti3O12 thin films
Creators
- 1. Nanjing University, National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing (China)
Description
Microstructures and impedance characteristics of chemical-solution-derived Bi3.15Nd0.85Ti3O12 thin films were studied as functions of temperature. A dielectric anomaly was found at around 450 C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies, grain and grain boundary contributions to the impedance were separated. The resistance of grain and grain boundaries is found governed by the same kind of space charge with an activation energy around 1.1 eV, close to that of oxygen vacancies in perovskite ferroelectrics. The low temperature ac conductance of BNdT thin films shows a frequency dispersion, which can also be ascribed to space charges mainly due to oxygen vacancies. The results were compared with SrBi2Ta2O9 in terms of oxygen vacancy conductivity. (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1007/s00339-008-4935-yAdditional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing
- Journal Volume
- 95
- Journal Issue
- 2
- Journal Page Range
- p. 517-521
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 40035250
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ALTERNATING CURRENT; BISMUTH COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE; FERROELECTRIC MATERIALS; FREQUENCY DEPENDENCE; GRAIN BOUNDARIES; HZ RANGE; KHZ RANGE 01-100; KHZ RANGE 100-1000; NEODYMIUM COMPOUNDS; PERMITTIVITY; PHASE TRANSFORMATIONS; SPACE CHARGE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANATES; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CURRENTS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ENERGY; FILMS; FREQUENCY RANGE; IMPEDANCE; KHZ RANGE; MATERIALS; MICROSCOPY; MICROSTRUCTURE; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RARE EARTH COMPOUNDS; SCATTERING; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS