Published May 2009 | Version v1
Journal article

Microstructures and impedance studies of Bi3.15Nd0.85Ti3O12 thin films

  • 1. Nanjing University, National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing (China)

Description

Microstructures and impedance characteristics of chemical-solution-derived Bi3.15Nd0.85Ti3O12 thin films were studied as functions of temperature. A dielectric anomaly was found at around 450 C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies, grain and grain boundary contributions to the impedance were separated. The resistance of grain and grain boundaries is found governed by the same kind of space charge with an activation energy around 1.1 eV, close to that of oxygen vacancies in perovskite ferroelectrics. The low temperature ac conductance of BNdT thin films shows a frequency dispersion, which can also be ascribed to space charges mainly due to oxygen vacancies. The results were compared with SrBi2Ta2O9 in terms of oxygen vacancy conductivity. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-008-4935-y

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
95
Journal Issue
2
Journal Page Range
p. 517-521
ISSN
0947-8396
CODEN
APAMFC