Published August 1985 | Version v1
Journal article Metadata-only

Diffusion mechanism of boron in silicon

Creators

  • 1. Gor'kovskij Gosudarstvennyj Univ. (USSR)

Description

New data on temperature dependence of a bending point on concentration profiles of boron diffusing into silicon have been obtained. Qualitative identity of these dependences for boron and phosphorus has been shown. Energy of the formation of interstitial boron atoms has been calculated and their possible concentration has been estimated. Results confirm assumptions on a significant role of the interstitial component of a diffusion flow in the formation of anomalous concentration profiles

Additional details

Additional titles

Original title (Russian)
Механизм диффузии бора в кремнии

Publishing Information

Journal Title
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Volume
21
Journal Issue
8
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
1253-1255
ISSN
0002-337X
CODEN
IVNMA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
17035293
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BORON; DIFFUSION; INTERSTITIALS; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; TIME DEPENDENCE; VERY HIGH TEMPERATURE
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; POINT DEFECTS; SEMIMETALS

Optional Information

Notes
For English translation see the journal Inorganic Materials (USA).