Published August 16, 2010
| Version v1
Journal article
Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics
Creators
- 1. Department of Electrical and Computer Engineering, Plasma Processing and Technology Laboratory, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
- 2. Novellus Systems, Albany, New York 12203 (United States)
- 3. Stanford University, Stanford, California 94305 (United States)
Description
The surface potential due to charge accumulation during vacuum ultraviolet irradiation of high-k and low-k thin dielectric films is measured. Measurement of the substrate current, which is the sum of the charge-accumulation and photoinjection currents, allows an in situ monitoring of the charge accumulation during irradiation. The relationship between the substrate current and the calculated in situ surface potential is also found, eliminating the need for a separate surface-potential measurement. With a high photon dose, the surface potential and substrate current reach a steady-state value with no further net charge accumulation.
Additional details
Identifiers
- DOI
- 10.1063/1.3481079;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 97
- Journal Issue
- 7
- Journal Page Range
- p. 072901-072901.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060566
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BUILDUP; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; IRRADIATION; PHOTONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; STEADY-STATE CONDITIONS; SUBSTRATES; SURFACE POTENTIAL; THIN FILMS; ULTRAVIOLET RADIATION
- Descriptors DEC
- BOSONS; CURRENTS; DOSES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FILMS; MASSLESS PARTICLES; MATERIALS; POTENTIALS; RADIATION EFFECTS; RADIATIONS
Optional Information
- Notes
- (c) 2010 American Institute of Physics