Published September 27, 2024 | Version v1
Journal article

Slow electron-phonon relaxation controls the dynamics of the superconducting resistive transition

  • 1. Moscow Pedagogical State University, Moscow 119435, Russian Federation
  • 2. National Research University Higher School of Economics, 20 Myasnitskaya Street, Moscow 101000, Russian Federation
  • 3. Laboratory of Photonic Gas Sensors, University of Science and Technology MISIS, Moscow 119049, Russian Federation
  • 4. Birck Nanotechnology Center and Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
  • 5. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
  • 6. Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
  • 7. Illinois Quantum Information Science and Technology Center, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
  • 8. Moscow Institute of Physics and Technology, Dolgoprudny, 141701, Russian Federation
  • 9. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, Wisconsin 53706, USA
  • 10. Russian Quantum Center, Moscow 121205, Russian Federation

Description

We investigate the temporal and spatial scales of resistance fluctuations (R fluctuations) at the superconducting resistive transition accessed through voltage fluctuation measurements in thin epitaxial TiN films. This material is characterized by slow electron-phonon relaxation, which puts it far beyond the applicability range of the textbook scenario of superconducting fluctuations. The measured Lorentzian spectrum of the R fluctuations identifies their correlation time, which is nearly constant across the transition region and has no relation to the conventional Ginzburg-Landau timescale. Instead, the correlation time coincides with the energy relaxation time determined by a combination of the electron-phonon relaxation and the relaxation via diffusion into reservoirs. Our data are quantitatively consistent with the model of spontaneous temperature fluctuations and highlight the lack of understanding of the resistive transition in materials with slow electron-phonon relaxation.

Additional details

Identifiers

DOI
10.1103/PhysRevB.110.104519;
arXiv
arXiv:2202.06309;
Crossref Funder ID
10.13039/501100007251; 10.13039/100000015; 10.13039/100006132; 10.13039/100006151;

Publishing Information

Journal Title
Physical Review B
Journal Volume
110
Journal Issue
10
Journal Page Range
7 pgs.
ISSN
1550-235X

Optional Information

Copyright
©2024 American Physical Society
Contract/Grant/Project number
FSME-2022-0008; DESC0020313; DESC0020313
Notes
Record automatically processed
Funding organization
National Research University Higher School of Economics; U.S. Department of Energy; Office of Science; Basic Energy Sciences