Slow electron-phonon relaxation controls the dynamics of the superconducting resistive transition
Creators
- 1. Moscow Pedagogical State University, Moscow 119435, Russian Federation
- 2. National Research University Higher School of Economics, 20 Myasnitskaya Street, Moscow 101000, Russian Federation
- 3. Laboratory of Photonic Gas Sensors, University of Science and Technology MISIS, Moscow 119049, Russian Federation
- 4. Birck Nanotechnology Center and Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
- 5. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
- 6. Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
- 7. Illinois Quantum Information Science and Technology Center, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
- 8. Moscow Institute of Physics and Technology, Dolgoprudny, 141701, Russian Federation
- 9. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, Wisconsin 53706, USA
- 10. Russian Quantum Center, Moscow 121205, Russian Federation
Description
We investigate the temporal and spatial scales of resistance fluctuations ( fluctuations) at the superconducting resistive transition accessed through voltage fluctuation measurements in thin epitaxial TiN films. This material is characterized by slow electron-phonon relaxation, which puts it far beyond the applicability range of the textbook scenario of superconducting fluctuations. The measured Lorentzian spectrum of the fluctuations identifies their correlation time, which is nearly constant across the transition region and has no relation to the conventional Ginzburg-Landau timescale. Instead, the correlation time coincides with the energy relaxation time determined by a combination of the electron-phonon relaxation and the relaxation via diffusion into reservoirs. Our data are quantitatively consistent with the model of spontaneous temperature fluctuations and highlight the lack of understanding of the resistive transition in materials with slow electron-phonon relaxation.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.110.104519;
- arXiv
- arXiv:2202.06309;
- Crossref Funder ID
- 10.13039/501100007251; 10.13039/100000015; 10.13039/100006132; 10.13039/100006151;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 110
- Journal Issue
- 10
- Journal Page Range
- 7 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CONTROL; CORRELATIONS; DIFFUSION; ELECTRON-PHONON COUPLING; ELECTRONS; EPITAXY; GINZBURG-LANDAU THEORY; LANDAU FLUCTUATIONS; PHONONS; RELAXATION; RELAXATION TIME; SPIN-LATTICE RELAXATION; SUPERCONDUCTING FILMS; SUPERCONDUCTIVITY; THIN FILMS; TIN
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- FSME-2022-0008; DESC0020313; DESC0020313
- Notes
- Record automatically processed
- Funding organization
- National Research University Higher School of Economics; U.S. Department of Energy; Office of Science; Basic Energy Sciences