Published July 1988
| Version v1
Journal article
Investigation of cross-contamination during Si-implantation in GaAs with SIMS
Description
The contamination of Si-implantation in GaAs was analysed with SIMS. This was done by measuring the molecules composed of the 'contamination-atoms' and the matrix atoms. It was concluded that there exists a co-implantation of 14N15N, 10B19F, 11B18O up to 40% of the dose for the 29Si-implantation in the worst case and 20% of 14N2 for the 28Si-implantation. Electrical measurements and a residual gas analysis confirmed these results. A good mass separation for the implanter was found. (author)
Additional details
Publishing Information
- Journal Title
- Surf. Interface Anal.
- Journal Volume
- 12
- Journal Issue
- 1-12
- Series
- Surf. Interface Anal.
- Journal Page Range
- 339-343
- ISSN
- 0142-2421
- CODEN
- SIAND
Conference
- Title
- European conference on applications of surface and interface analysis.
- Acronym
- ECASIA 87
- Dates
- 19-23 Oct 1987.
- Place
- Fellbach (Germany, F.R.).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 19094879
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON 10; BORON 11; CONTAMINATION; FLUORINE 19; GALLIUM ARSENIDES; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTRA; NITROGEN 14; NITROGEN 15; OXYGEN 18; SILICON 28 BEAMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; BORON ISOTOPES; CHEMICAL ANALYSIS; EVEN-EVEN NUCLEI; FLUORINE ISOTOPES; GALLIUM COMPOUNDS; ION BEAMS; ISOTOPES; LIGHT NUCLEI; MICROANALYSIS; NITROGEN ISOTOPES; NONDESTRUCTIVE ANALYSIS; NUCLEI; ODD-EVEN NUCLEI; ODD-ODD NUCLEI; OXYGEN ISOTOPES; SPECTRA; STABLE ISOTOPES
Optional Information
- Contract/Grant/Project number
- Contract EN35-0079