Published July 2007
| Version v1
Journal article
Effect of deposition conditions on nanowhisker morphology
Creators
- 1. Russian Academy of Sciences, St. Petersburg Physical Technical Center for Research and Education (Russian Federation)
- 2. Russian Academy of Sciences, Institute of Analytical Instrument Making (Russian Federation)
- 3. CNRS-LPN (France)
Description
The results of theoretical investigation of the effect of deposition conditions on the morphological properties of nanowhiskers (nanowires) in different growth technologies are presented. The dependences of the whisker length on their radius, temperatures, deposition rate, density, and average sizes of droplets (growth catalysts) are obtained. Effective adatom diffusion lengths on the substrate surface are determined under various growth conditions. Theoretical dependences of the nanowhisker length on radius and surface growth temperature are corroborated by experimental data obtained for GaAs whiskers grown by molecular-beam epitaxy on the Au-activated GaAs(111)As surface
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 41
- Journal Issue
- 7
- Journal Page Range
- p. 865-874
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39098097
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEPOSITION; DIFFUSION LENGTH; GALLIUM ARSENIDES; GOLD; MOLECULAR BEAM EPITAXY; QUANTUM WIRES; WHISKERS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; DIMENSIONS; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; LENGTH; METALS; MONOCRYSTALS; NANOSTRUCTURES; PNICTIDES; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2007 Pleiades Publishing, Ltd.