Published September 1976 | Version v1
Journal article Metadata-only

Study on negative annealing of γ-radiative defects in diffusion silicon diodes

Creators

  • 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Исследование отрицательного отжига γ-радиационных дефектов в диффузионных кремниевых диодах

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
10
Journal Issue
9
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
1755-1757

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
8338799
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; CARRIER LIFETIME; COLOR CENTERS; GAMMA RADIATION; HIGH TEMPERATURE; SILICON DIODES; TEMPERATURE DEPENDENCE; TIME DEPENDENCE
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; HEAT TREATMENTS; IONIZING RADIATIONS; LIFETIME; POINT DEFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; VACANCIES

Optional Information

Notes
Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.