Effect of irradiation temperature on defect production efficiency of SiC single crystal

The effects of irradiation temperature on the defect production efficiency of SiC single crystal was measured and the results were compared with that of MgO, Al2O3, AlN, BN and KCl. 4H-SiC and 6H-SiC single crystal were used as samples. The absorption spectra after irradiation showed 780 nm broad absorption band originated from Vsi. The effect of irradiation temperature on the defect production efficiency of oxide insulator (MgO, Al2O3) was same as that of metals and the effect on that of semiconductor with covalent bond (SiC) same as that of ionic crystal insulator (KCl). The semiconductor (TiO2) has the intermediate properties between the above two kinds of compounds. The defect production efficiency of nitride (AlN and BN) was not affected by the irradiation temperature in the low temperature region. (S.Y.)