Published April 1994
| Version v1
Journal article
Concentration mechanism of piezoresistance in SmS
Creators
- 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.
Description
Data on the SmS band structure are generalized and supplemented. A concentration model of the piezoresistance effect mechanism is proposed on the base of the data. It is shown that for production of a material with the piezoresistance exceeding the value for SmS at 300 K it is necessary to increase the contribution from 4f levels as far as possible
Additional details
Additional titles
- Original title (Russian)
- Концентрационный механизм пьезосопротивления SmS
Publishing Information
- Journal Title
- Fizika Tverdogo Tela
- Journal Volume
- 36
- Journal Issue
- 4
- Journal Page Range
- p. 1172-1175.
- ISSN
- 0367-3294
- CODEN
- FTVTAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26024107
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MONOCRYSTALS; PIEZOELECTRICITY; SAMARIUM SULFIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ELECTRICITY; MATERIALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SAMARIUM COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE