Published April 1995
| Version v1
Journal article
Magnetoresistance of high pressure metastable phases
Creators
- 1. RAN, Ural'skoe Otdelenie, Inst. Fiziki Metallov, Ekaterinburg (Russian Federation)
Description
Transverse magnetoresistance (MR) of semiconducting materials (HgCdSe, ZnS, ZnSe and GaP) is studied at a high pressure P, causing transitions to new structural modifications. MR grows in proportion to magnetic field B square in HgSe crystals in the region of a phase transition from cubic modification to hexagonal one. High mobility of conductivity electrons in this state is conditioned by inclusion of a source semimetallic phase. These inclusions are also responsible for metallic course of resistance temperature dependence. Similar data on MR are obtained for HgCdSe crystals. 13 refs., 3 figs
Additional details
Additional titles
- Original title (Russian)
- Magnitosoprotivlenie metastabil'nykh faz vysokogo davleniya
Publishing Information
- Journal Title
- Fizika Tverdogo Tela
- Journal Volume
- 37
- Journal Issue
- 4
- Journal Page Range
- p. 1015-1021.
- ISSN
- 0367-3294
- CODEN
- FTVTAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 27050490
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SELENIDES; CRYSTAL LATTICES; CRYSTAL-PHASE TRANSFORMATIONS; ELECTRON MOBILITY; INCLUSIONS; MAGNETIC FIELDS; MAGNETORESISTANCE; MERCURY SELENIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; VERY HIGH PRESSURE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MATERIALS; MERCURY COMPOUNDS; MOBILITY; PARTICLE MOBILITY; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS