Electron spectroscopy of Si, SiO2 and Si3N4 surfaces after O2+ and N2+ reactive ion implantation

Composition of layers which appear on the surface of silicon and its compounds at the bombardment by 0.05-2 keV O2+ and N2+ ions is studied by the methods of ionization spectroscopy and electron Auger spectroscopy. Both stable and thermally instable multiphase oxides and cadmium nitrides, composition of which depends to a great extent on the dose of implanted atoms and to a lesser extent on their energy, are shown to be formed on the (100) Si surface during the bombardment by nitrogen and oxygen ions with the doses of 5x1014-2x1016 atxcm-2 at the room temperature. Presented is the dependence of the value of ionization losses (ΔEsub(L)sub(2,3)) on the oxygen and nitrogen content in oxinitrides obtained by the methods of reactive ion implantation