The effect of heat treatments on the microstructure and electrical properties of Al/TiW/polycrystalline Si contacts
Creators
- 1. Technion-Israel Inst. of Tech., Haifa (Israel). Dept. of Materials Engineering
Description
This paper reports on the effect of heat treatments on the microstructure, composition and electrical properties of the Al/TiW/ Polycrystalline Si system studied systematically for the first time. It was found that Al and Si diffuse through the grain boundaries of the TiW layer at 400 degrees C. Subsequently, Si accumulates at the Al/TiW interface while Al diffuses into the polycrystalline Si. TiSi, TiSi2, Al3Ti, and WAl12 are formed only at the Al/TiW interface as a result of the heat-treatments for 30 min at temperatures between 450 and 500 degrees C. The sheet resistance, measured on the surface of the Al film, is constant up to 350 degrees C and then increases with the heat treatment temperature at all times. The I-V curves are characteristic to Schottky diodes
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-094-1
- Imprint Title
- Evolution of thin-film and surface microstructure
- Imprint Pagination
- 731 p.
- Journal Page Range
- p. 707-712.
Conference
- Title
- Fall meeting of the Materials Research Society (MRS).
- Dates
- 24 Nov - 1 Dec 1990.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23041853
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ALUMINIUM BASE ALLOYS; CHEMICAL COMPOSITION; DIFFUSION; ELECTRICAL PROPERTIES; GRAIN BOUNDARIES; HEAT TREATMENTS; INTERFACES; MICROSTRUCTURE; POLYCRYSTALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SILICON; TEMPERATURE DEPENDENCE; THERMODYNAMIC PROPERTIES; THIN FILMS; TITANIUM ALLOYS; TUNGSTEN ALLOYS
- Descriptors DEC
- ALLOYS; ALUMINIUM ALLOYS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; FILMS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DIODES; SEMIMETALS
Optional Information
- Secondary number(s)
- CONF-901105--.