Published July 1998 | Version v1
Journal article Metadata-only

Effect of deposition and annealing conditions on the optical properties of amorphous silicon

Creators

  • 1. N.I. Lobachevskii Nizhnii Novgorod State University, 603600 Nizhnii Novgorod (Russian Federation)

Description

The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6-2.0 eV for amorphous silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and treatment conditions

Additional details

Identifiers

DOI
10.1134/1.1187505;
PII
S1063-7826(98)02307-2;

Publishing Information

Journal Title
Semiconductors
Journal Volume
32
Journal Issue
7
Journal Page Range
p. 782-784
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051800
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
AMORPHOUS STATE; ANNEALING; CRYSTAL DEFECTS; DEPOSITION; DIELECTRIC MATERIALS; ENERGY BEAM DEPOSITION; EXPERIMENTAL DATA; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; SILICON; THIN FILMS
Descriptors DEC
CRYSTAL STRUCTURE; DATA; DEPOSITION; ELEMENTS; FILMS; HEAT TREATMENTS; INFORMATION; MATERIALS; NUMERICAL DATA; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SEMIMETALS; SURFACE COATING

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 32, 879-881 (July 1998); (c) 1998 American Institute of Physics.