Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si(100): Size and roughness evolution
- 1. Dipartimento di Fisica e Astronomia, MATIS CNR-INFM, Universita di Catania, via S. Sofia 64, I-95123 Catania (Italy)
- 2. Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM) Stradale Primosole 50, I-95121 Catania (Italy)
Description
Very thin Au layer was deposited on Si(100) using the sputtering technique. By annealing at 873 K Au/Si nanodroplets were formed and their self-organization was induced changing the annealing time. The evolution of droplet size distribution, center-to-center distance distribution, and droplet density as a function of the annealing time at 873 K was investigated by Rutherford backscattering spectrometry, atomic force microscopy (AFM), and scanning electron microscopy. As a consequence of such study, the droplet clustering is shown to be a ripening process of hemispherical three-dimensional structures limited by the Au surface diffusion. The application of the ripening theory allowed us to calculate the surface diffusion coefficient and all other parameters needed to describe the entire process. Furthermore, the AFM measurements allowed us to study the roughness evolution of the sputtered Au thin film and compare the experimental data with the dynamic scaling theories of growing interfaces
Additional details
Identifiers
- DOI
- 10.1063/1.2955784;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 104
- Journal Issue
- 2
- Journal Page Range
- p. 024310-024310.7
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40018061
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; DIFFUSION; DROPLETS; GOLD; NANOSTRUCTURES; RIPENING; ROUGHNESS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; SURFACE COATING; THIN FILMS
- Descriptors DEC
- DEPOSITION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; METALS; MICROSCOPY; PARTICLES; SEMIMETALS; SPECTROSCOPY; SURFACE PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2008 American Institute of Physics