Published 2002
| Version v1
Miscellaneous
Reactive ion etching of novel materials - GaN and SiC
Creators
- 1. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw (Poland)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Imprint Pagination
- 174 p.
- Journal Page Range
- p. 22
Conference
- Title
- 4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Dates
- 10-13 Jun 2002
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 34075092
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARGON IONS; ETCHING; FLUORINATED ALIPHATIC HYDROCARBONS; GALLIUM NITRIDES; ION BEAMS; KINETICS; MASS SPECTROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDES; SUBSTRATES; SURFACE PROPERTIES
- Descriptors DEC
- BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CORUNDUM; ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; HALOGENATED ALIPHATIC HYDROCARBONS; IONS; MICROSCOPY; MINERALS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC FLUORINE COMPOUNDS; ORGANIC HALOGEN COMPOUNDS; OXIDE MINERALS; PNICTIDES; SILICON COMPOUNDS; SPECTROSCOPY; SURFACE FINISHING
Optional Information
- Notes
- 1 fig.