Self-hardening effect of CrAlN/BN nanocomposite films deposited by direct current and radio frequency reactive cosputtering
- 1. Faculty of Art and Design, University of Toyama, 180 Futakami, Takaoka-shi, Toyama 933‐8588 (Japan)
- 2. NISP Lab., NanoCenter, University of Maryland, College Park, MD 20742‐2831 (United States)
- 3. School of Science and Engineering, University of Toyama, Toyama-shi, Toyama 930‐8555 (Japan)
- 4. Hydrogen Isotope Research Center, University of Toyama, Toyama-shi, Toyama 930‐8555 (Japan)
Description
A CrAlN/18 vol.% BN nanocomposite film was deposited on substrate by reactive co-sputtering. The films showed an increase of about 30% in indentation hardness and achieved a maximum hardness of approximately 50 GPa after annealing at 800 °C in air. In contrast, the indentation hardness barely changed when the film sample was annealed at 800 °C in nitrogen and argon atmosphere. High-resolution transmission electron microscopy (HRTEM) images revealed that the uppermost layer was characterized by amorphous materials with embedded nanocrystalline particles (occurring at less than ∼ 50 nm below surface). Energy dispersive X-ray spectroscopy (EDS) line profiles of cross-sectional thin films showed a high concentration of oxygen in the uppermost layer of the annealed sample. The indentation hardness of the air-annealed sample was measured by Ar+ ion sputtering before and after etching to the depth at 200 nm from the annealed surface. The hardness decreased from approximately 48 GPa to 43 GPa, which was the same level as the as-deposited films. These results indicate that oxidization of the film surface could be one of the factors responsible for the self-hardening of the CrAlN/BN film.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2012.05.063Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2012.05.063;
- PII
- S0040-6090(12)00664-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 523
- Journal Page Range
- p. 6-10
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 24. symposium on plasma science for materials
- Acronym
- SPSM-24
- Dates
- 19-20 Jul 2011
- Place
- Osaka (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44103735
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ARGON; ARGON IONS; BORON NITRIDES; CRYSTALS; DEPOSITS; DIRECT CURRENT; HARDENING; HARDNESS; LAYERS; NANOSTRUCTURES; NITROGEN; OXIDATION; PRESSURE RANGE GIGA PA; SPUTTERING; SURFACE ENERGY; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY
- Descriptors DEC
- BORON COMPOUNDS; CHARGED PARTICLES; CHEMICAL REACTIONS; CURRENTS; ELECTRIC CURRENTS; ELECTRON MICROSCOPY; ELEMENTS; ENERGY; FILMS; FLUIDS; FREE ENERGY; GASES; HEAT TREATMENTS; IONS; MECHANICAL PROPERTIES; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHYSICAL PROPERTIES; PNICTIDES; PRESSURE RANGE; RARE GASES; SPECTROSCOPY; SURFACE PROPERTIES; THERMODYNAMIC PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.