Published 1999
| Version v1
Miscellaneous
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Oxide charge modeling with Cea-Trappox code version 4. Comparison of trapping models with a desktop computer
Creators
- 1. CEA Bruyeres-le-Chatel, 91 (France)
Description
The charge trapped in oxides results from a vast number of parameters (spatial and energetic distribution of traps, voltage and dose-rate profile, internal space-charge effect, etc.) We demonstrate that 1-D simulations with personal computers can be extremely effective to extract oxide parameters from experimental data, thus enabling prediction in various mission profiles. (authors)
Availability note (English)
Available from INIS in electronic formFiles
34077976.pdf
Files
(414.7 kB)
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Additional details
Additional titles
- Original title (English)
- Modelisation de la charge dans les oxydes avec le code CEA-Trappox version 4. Comparaison des modeles de piegeage avec un ordinateur de bureau
Publishing Information
- Imprint Pagination
- [5 p.]
- Report number
- INIS-FR--1982
Conference
- Title
- 5. European conference on radiation and its effects on components and systems
- Original Conference Title
- 5. congres europeen les radiations et leurs effets sur les composants et les systemes
- Dates
- 13-17 Sep 1999
- Place
- Abbaye de Fontevraud (France)
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 34077976
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE COLLECTION; COMPUTERIZED SIMULATION; MATHEMATICAL MODELS; MOS TRANSISTORS; OXIDES; T CODES; TRAPS
- Descriptors DEC
- CHALCOGENIDES; COMPUTER CODES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SIMULATION; TRANSISTORS
Optional Information
- Notes
- 18 refs.