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Published February 1, 2018 | Version v1
Journal article

Understanding homogeneous nucleation in solidification of aluminum by molecular dynamics simulations

  • 1. Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States)
  • 2. Department of Mechanical and Aerospace Engineering, University of California-San Diego, La Jolla, CA 92093 (United States)

Description

Homogeneous nucleation from aluminum (Al) melt was investigated by million-atom molecular dynamics simulations utilizing the second nearest neighbor modified embedded atom method potentials. The natural spontaneous homogenous nucleation from the Al melt was produced without any influence of pressure, free surface effects and impurities. Initially isothermal crystal nucleation from undercooled melt was studied at different constant temperatures, and later superheated Al melt was quenched with different cooling rates. The crystal structure of nuclei, critical nucleus size, critical temperature for homogenous nucleation, induction time, and nucleation rate were determined. The quenching simulations clearly revealed three temperature regimes: sub-critical nucleation, super-critical nucleation, and solid-state grain growth regimes. The main crystalline phase was identified as face-centered cubic, but a hexagonal close-packed (hcp) and an amorphous solid phase were also detected. The hcp phase was created due to the formation of stacking faults during solidification of Al melt. By slowing down the cooling rate, the volume fraction of hcp and amorphous phases decreased. After the box was completely solid, grain growth was simulated and the grain growth exponent was determined for different annealing temperatures. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-651X/aa9f36

Additional details

Identifiers

Publishing Information

Journal Title
Modelling and Simulation in Materials Science and Engineering
Journal Volume
26
Journal Issue
2
Journal Page Range
[31 p.]
ISSN
0965-0393