Published 1995 | Version v1
Miscellaneous Open

Defect production in silicon implanted with 118 MeV Xe ions

Creators

  • 1. Fern Universitaet Hagen, (Germany). LG Bauelemente der Elektrotechnik
  • 2. Belaruski Dzyarzhawny Univ., Minsk (Belarus)

Description

Short communication

Files

28080471.pdf

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Part of:
Ninth international conference on ion beam modification of materials. Book of abstracts

Additional details

Publishing Information

Publisher
Accademic Press.
Imprint Title
Ninth international conference on ion beam modification of materials. Book of abstracts
Imprint Pagination
452 p.
Journal Page Range
p. 10009.
Report number
INIS-AU--0004

Conference

Title
9. international conference on ion beam modification of materials.
Acronym
IBMM'95
Dates
5-10 Feb 1995.
Place
Canberra (Australia).

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
28080471
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
CRYSTAL DEFECTS; DOSE-RESPONSE RELATIONSHIPS; ELECTRIC CONDUCTIVITY; INTERFACES; ION IMPLANTATION; MEV RANGE 100-1000; ORDER-DISORDER TRANSFORMATIONS; REFLECTIVITY; SILICON; XENON IONS
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; IONS; MEV RANGE; OPTICAL PROPERTIES; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SEMIMETALS; SURFACE PROPERTIES

Optional Information