Published July 2007 | Version v1
Journal article

Nonlinear absorption and susceptibility of the fifth order in InSb at the wavelength of 10.6 μm

Description

It is shown that nonlinear absorption of laser radiation at the wavelength of 10.6 μm in band-gap semiconductor InSb is caused by two-photon absorption and the constant of nonlinear absorption is measured in samples of n-type with a different degree alloying. It is established, that the basic mechanism of nonlinearity responsible for reflection at degenerate four-wave mixing is caused by three electron generation at two-photon absorption. Growth of efficiency at four-wave mixing in band-gap semiconductors is limited to nonlinear absorption of interacting waves

Additional details

Publishing Information

Journal Title
Fizika (Baku)
Journal Volume
14
Journal Issue
2
Journal Page Range
p. 15-17
ISSN
1028-8546