Published August 2018
| Version v1
Journal article
Interfacial Ferromagnetism in a Co/CdTe Ferromagnet/Semiconductor Quantum Well Hybrid Structure
Creators
- 1. Ioffe Institute (Russian Federation)
- 2. Technische Universität Dortmund, Experimentelle Physik 2 (Germany)
- 3. Polish Academy of Sciences, Institute of Physics (Poland)
Description
The magnetization properties of a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure are investigated by several techniques. Exploiting the proximity effect between acceptor bound holes and magnetic ions we detect the magnetization curves by measuring the circular polarization of photoluminescence in an out-of-plane magnetic field. We show that magnetization originates from interfacial ferromagnet on Co-CdMgTe interface and the proximity effect is caused by magnetization of interfacial Co-CdMgTe ferromagnetic layer whose magnetic properties are very different from Co.
Additional details
Identifiers
Publishing Information
- Journal Title
- Physics of the Solid State
- Journal Volume
- 60
- Journal Issue
- 8
- Journal Page Range
- p. 1578-1581
- ISSN
- 1063-7834
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50014270
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM COMPOUNDS; CADMIUM TELLURIDES; COBALT; FERROMAGNETIC MATERIALS; INTERFACES; LAYERS; MAGNESIUM COMPOUNDS; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETIZATION; PHOTOLUMINESCENCE; POLARIZATION; PROXIMITY EFFECT; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TELLURIUM COMPOUNDS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; EMISSION; LUMINESCENCE; MAGNETIC MATERIALS; MATERIALS; METALS; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2018 Pleiades Publishing, Ltd.