Published 1997 | Version v1
Book

Materials modification and synthesis by ion beam processing

  • 1. Argonne National Lab., IL (United States)
  • 2. Univ. of California, Berkeley, CA (United States)
  • 3. Georgia Inst. of Tech., Atlanta, GA (United States)
  • 4. Research Center Rossendorf, Inc., Dresden (Germany)

Description

The symposium provided an excellent and well-attended international forum for the discussion of material science issues related to ion-beam modification and processing. In addition to work on optical materials, metals, insulators and polymers, two areas of considerable interest were electronic materials and hard coatings. Substantial attention remains focused on silicon technology, where the shrinking device dimensions of microelectronic circuits are driving the need for ultra-shallow implant depths. Another strong area of interest was hard coatings, driven in part by demands for wear-resistant recording media coatings. Considerable discussion centered on the synthesis of novel metastable materials, such as carbon nitride, amorphous carbon (DLC), multilayers and nanophases. The scientific objectives of the work presented focused on providing an in-depth understanding of phase formation and growth mechanisms of controversial metastable phases. Separate abstracts were prepared for some papers in this volume

Availability note (English)

Materials Research Society, 9800 McKnight Road, Pittsburgh, PA 15237 (United States) $68.00.

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-342-8
Imprint Pagination
748 p.
Series
Materials Research Society symposium proceedings, Volume 438.

Conference

Title
1996 Fall meeting of the Materials Research Society (MRS).
Dates
2-6 Dec 1996.
Place
Boston, MA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
29012632
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CORROSION; ION BEAMS; ION IMPLANTATION; LEADING ABSTRACT; MATERIALS; MEETINGS; NITRIDES; POLYMERS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SYNTHESIS
Descriptors DEC
ABSTRACTS; BEAMS; CHEMICAL REACTIONS; NITROGEN COMPOUNDS; PNICTIDES

Optional Information

Secondary number(s)
CONF-961202--.