Published May 2011
| Version v1
Journal article
Simultaneous TE1 and TE2 mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction
Creators
- 1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- 2. Nizhni Novgorod State University, Physicotechnical Institute (Russian Federation)
Description
Dual-frequency oscillation is obtained and investigated in a new type of injection heterolaser, an interband two-stage cascade laser with a tunneling p-n junction separating two active regions with quantum wells located in a common waveguide. The laser design provides for simultaneous oscillation at the first-order TE mode of wavelength λ = 1.086 μm and the second-order TE mode of wavelength λ = 0.96 μm in the continuous-wave regime at room temperature.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 45
- Journal Issue
- 5
- Journal Page Range
- p. 641-645
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43094916
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- OSCILLATIONS; P-N JUNCTIONS; QUANTUM WELLS; SEMICONDUCTOR LASERS; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT; WAVELENGTHS
- Descriptors DEC
- LASERS; NANOSTRUCTURES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS
Optional Information
- Copyright
- Copyright (c) 2011 Pleiades Publishing, Ltd.