Published April 1985 | Version v1
Journal article

Ion source for layer analysis of thin films

  • 1. Semiconductor Physics Branch, Siberian Branch

Description

The ion source described here consists of a system of metal rings with calibrated inner diameters. One of two different ionizers is used--one with cold cathode, the other with directly heated cathode. The ion beam is formed by a system of two isolated lenses separated by a cutoff diaphragm. At a gas flow rate of 10-4 liter X torr/sec the beam current is 1 Mu A at theta 0.5 mm at a distance of 50 mm from the source exit. The source can be used for secondary ion mass spectroscopy and ion-Auger spectroscopy

Additional details

Publishing Information

Journal Title
Instrum. Exp. Tech. (Engl. Transl.)
Journal Volume
27
Journal Issue
5
Series
Instrum. Exp. Tech. (Engl. Transl.).
Journal Page Range
1208-1210
ISSN
0020-4412
CODEN
INETA

Optional Information

Notes
Translated from Pribory i Tekhnika Eksperimenta, No. 5, pp. 149-151, September-October, 1984.. Cover-to-cover translation of Pribory i Tekhnika Ehksperimenta (USSR).