Published January 31, 2011
| Version v1
Journal article
Electronic structure and optical properties of substitutional and interstitial phosphor-doped ZnO
Creators
- 1. College of Physical Science and Technology, Hebei University, Baoding 071002 (China)
Description
Using first-principles method, electronic structure and optical properties of phosphorus-doped ZnO for the possible substitutional (PZn, PO) and interstitial (Ptet, Poct) doping are investigated. PO gives p-type conductivity, but others show n-type. PO and Ptet has a significant difference in optical properties due to the contribution of P 3p states at Fermi level.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physleta.2010.12.064Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2010.12.064;
- PII
- S0375-9601(10)01624-5;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 375
- Journal Issue
- 5
- Journal Page Range
- p. 939-945
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42097187
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPUTERIZED SIMULATION; DOPED MATERIALS; ELECTRONIC STRUCTURE; FERMI LEVEL; INTERSTITIALS; OPTICAL PROPERTIES; PHOSPHORUS ADDITIONS; ZINC OXIDES
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY LEVELS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; SIMULATION; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.