S2E simulation of an ERL-based EUV-FEL source for lithography

Energy recovery linac (ERL) based extreme ultraviolet (EUV) free electron lasers (FELs) are expected as a new-type high-power EUV source for lithography, which can distribute 1-kW class power to multiple scanners simultaneously. An ERL-based EUV FEL source has been designed in order to demonstrate the feasibility of generating a 10-kW class EUV power. We perform Start-to-End (S2E) simulation including the injection beam optimization, bunch compression, FEL lasing and bunch decompression for the designed EUV source. As a result we demonstrate that the EUV FEL can produce high power more than 10 kW at 10 mA and that the electron beam can be well transported throughout the EUV source without significant beam loss. (author)