Incoherent-light-flash annealing of phosphorus-implanted silicon
Creators
- 1. Laboratorio LAMEL, Consiglio Nazionale delle Ricerche, Via de' Castagnoli 1, 40126 Bologna, Italy
Description
Incoherent light pulses emitted from a xenon flash lamp were used to anneal radiation damage in (100) silicon implanted with 2 x 101531P+/cm2 at 100 keV. Electrical carrier concentration has been determined by means of differential sheet resistivity and Hall effect together with the anodic oxidation stripping technique; the surface photovoltage technique has been used to evaluate bulk lifetime and Rutherford backscattering and transmission electron microscopy for analysis of radiation damage. Damage recovery appears to take place via a solid phase epitaxial process. Electrical activity and carrier mobility values of samples annealed by incoherent light are similar to those obtained by laser, electron beam, and furnace annealing. The bulk lifetime of minority carriers is not degraded
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 37
- Journal Issue
- 1
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 55-57
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11558143
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPY; GAS LASERS; HALL EFFECT; ION IMPLANTATION; LASER-RADIATION HEATING; PHOSPHORUS IONS; PHOTOVOLTAIC EFFECT; PHYSICAL RADIATION EFFECTS; PULSES; QUANTITY RATIO; RUTHERFORD SCATTERING; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- AMPLIFIERS; ATOMIC IONS; CHARGED PARTICLES; ELASTIC SCATTERING; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; HEATING; IONS; LASERS; MICROSCOPY; MOBILITY; PHYSICAL PROPERTIES; PLASMA HEATING; RADIATION EFFECTS; SCATTERING; SEMIMETALS