Published September 1, 2014 | Version v1
Journal article

A variety of microstructural defects in crystalline silicon solar cells

  • 1. Faculty of Electrical Engineering, Department of Physics, Brno University of Technology, Technická 8, Brno 616 00 (Czech Republic)
  • 2. South Dakota School of Mines and Technology, Nanoscience and Nanoengineering, 501 E. St. Joseph St., Rapid City, SD 57701 (United States)

Description

Graphical abstract: - Highlights: • Microstructure defects in crystalline silicon. • Light beam induced photocurrent. • Reversed bias voltage measurements on microscale. • Thermal measurement allows identification of defect breakdown mechanism. - Abstract: The performance and lifetime of solar cells critically depends on bulk and surface defects. To improve performance of solar cells, localization and characterization of defects on the microscale is an important issue. This paper describes a variety of microstructural defects in crystalline silicon solar cells which appear during the cell processing steps. The set of defects have been investigated and localized using visible light emission under reversed bias voltage. A light beam induced photocurrent method allows localization of defects having impact on the sample current–voltage plot and reversed bias light emission characteristics. These are shown together with the micrographs of defective surface areas. As a result, particular defects which induce nonlinearity and local breakdown in the current–voltage plot were identified in tested solar cell structures. Furthermore, measurements at various temperatures allows to identify the breakdown mechanism of the investigated defects. An interesting result of the investigation is that the majority of defects are associated with surface inhomogeneities, but not all surface inhomogeneities act as defects

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2014.05.064

Additional details

Identifiers

DOI
10.1016/j.apsusc.2014.05.064;
PII
S0169-4332(14)01081-2;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
312
Journal Page Range
p. 50-56
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
8. solid state surfaces and interfaces conference
Acronym
SSSI 2013
Dates
24-28 Nov 2013
Place
Smolenice (Slovakia)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46106755
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BEAMS; BREAKDOWN; DEFECTS; ELECTRIC POTENTIAL; EMISSION; MICROSTRUCTURE; SILICON; SILICON SOLAR CELLS; SURFACE AREA; SURFACES; VISIBLE RADIATION
Descriptors DEC
DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RADIATIONS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; SURFACE PROPERTIES

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.