A variety of microstructural defects in crystalline silicon solar cells
Creators
- 1. Faculty of Electrical Engineering, Department of Physics, Brno University of Technology, Technická 8, Brno 616 00 (Czech Republic)
- 2. South Dakota School of Mines and Technology, Nanoscience and Nanoengineering, 501 E. St. Joseph St., Rapid City, SD 57701 (United States)
Description
Graphical abstract: - Highlights: • Microstructure defects in crystalline silicon. • Light beam induced photocurrent. • Reversed bias voltage measurements on microscale. • Thermal measurement allows identification of defect breakdown mechanism. - Abstract: The performance and lifetime of solar cells critically depends on bulk and surface defects. To improve performance of solar cells, localization and characterization of defects on the microscale is an important issue. This paper describes a variety of microstructural defects in crystalline silicon solar cells which appear during the cell processing steps. The set of defects have been investigated and localized using visible light emission under reversed bias voltage. A light beam induced photocurrent method allows localization of defects having impact on the sample current–voltage plot and reversed bias light emission characteristics. These are shown together with the micrographs of defective surface areas. As a result, particular defects which induce nonlinearity and local breakdown in the current–voltage plot were identified in tested solar cell structures. Furthermore, measurements at various temperatures allows to identify the breakdown mechanism of the investigated defects. An interesting result of the investigation is that the majority of defects are associated with surface inhomogeneities, but not all surface inhomogeneities act as defects
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2014.05.064Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2014.05.064;
- PII
- S0169-4332(14)01081-2;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 312
- Journal Page Range
- p. 50-56
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 8. solid state surfaces and interfaces conference
- Acronym
- SSSI 2013
- Dates
- 24-28 Nov 2013
- Place
- Smolenice (Slovakia)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46106755
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BEAMS; BREAKDOWN; DEFECTS; ELECTRIC POTENTIAL; EMISSION; MICROSTRUCTURE; SILICON; SILICON SOLAR CELLS; SURFACE AREA; SURFACES; VISIBLE RADIATION
- Descriptors DEC
- DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RADIATIONS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.