Mechanisms of high energy charged particles beams deflection by a bent crystal

From the single point of view we have considered various mechanisms of high energy charged particles beams bending by a bent crystal. These mechanisms are based on multiple scattering of fast particles on bent atomic strings (stochastic mechanism), planar channelling and reflection of particles from crystal atomic planes (the effect of volume reflection). The results of computer simulation which allow to make a comparison between these beams bending mechanisms are presented. The consideration is performed for both positively and negatively charged particles. It is shown that stochastic mechanism is the most effective for negatively charged particles beam bending. The results of simulation under conditions that have been used in last CERN experiments on observation of stochastic mechanism of positively and negatively charged particles beams bending are presented.