Published June 15, 2012 | Version v1
Journal article

Adsorption of formaldehyde (HCOH) molecule on the SiC sheet: A first-principles study

Creators

  • 1. School of Physics, Ludong University, Yantai 264025 (China) and College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)

Description

We investigated the adsorption of HCOH molecule on the SiC sheet using density functional theory (DFT) calculations. It is found that the C atom of the SiC sheet is the active adsorption site and the HCOH molecule prefers to the C atom rather than the O and H atoms close to the SiC sheet. The calculated charge-transfer, electronic density difference image and the densities of states (DOS) show that the HCOH molecule could be firmly adsorbed by the SiC sheet and the electronic properties of the SiC sheet are affected by the adsorption of HCOH molecule. The SiC sheet would be promising candidate to detect the HCOH gas.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2012.03.116

Additional details

Identifiers

DOI
10.1016/j.apsusc.2012.03.116;
PII
S0169-4332(12)00555-7;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
258
Journal Issue
17
Journal Page Range
p. 6688-6691
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44030767
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ADSORPTION; ATOMS; DENSITY; DENSITY FUNCTIONAL METHOD; FORMALDEHYDE; MOLECULES; SENSORS; SILICON CARBIDES; SIMULATION
Descriptors DEC
ALDEHYDES; CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SORPTION; VARIATIONAL METHODS

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.