Published June 15, 2012
| Version v1
Journal article
Adsorption of formaldehyde (HCOH) molecule on the SiC sheet: A first-principles study
Creators
- 1. School of Physics, Ludong University, Yantai 264025 (China) and College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)
Description
We investigated the adsorption of HCOH molecule on the SiC sheet using density functional theory (DFT) calculations. It is found that the C atom of the SiC sheet is the active adsorption site and the HCOH molecule prefers to the C atom rather than the O and H atoms close to the SiC sheet. The calculated charge-transfer, electronic density difference image and the densities of states (DOS) show that the HCOH molecule could be firmly adsorbed by the SiC sheet and the electronic properties of the SiC sheet are affected by the adsorption of HCOH molecule. The SiC sheet would be promising candidate to detect the HCOH gas.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2012.03.116Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2012.03.116;
- PII
- S0169-4332(12)00555-7;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 258
- Journal Issue
- 17
- Journal Page Range
- p. 6688-6691
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44030767
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; ATOMS; DENSITY; DENSITY FUNCTIONAL METHOD; FORMALDEHYDE; MOLECULES; SENSORS; SILICON CARBIDES; SIMULATION
- Descriptors DEC
- ALDEHYDES; CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SORPTION; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.