Use of epitaxial silicon diodes in photon dosimetry
Description
In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 104 higher than the lowest photocurrents measured. The directional response of both diodes was 0.1% within an angle range of ± 5º. Based on these results, one can conclude that the unirradiated and pre-irradiated EPI diodes can be used as a reliable alternative choice to relative medical imaging photon dosimetry within 10 Gy and 206 kGy of accumulated dose, respectively. (author)
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Additional details
Additional titles
- Original title (Portuguese)
- Uso de diodos epitaxiais de SI em dosimetria de fotons
Publishing Information
- Imprint Pagination
- 62 p.
- Report number
- INIS-BR--14868
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 46021435
- Subject category
- S61: RADIATION PROTECTION AND DOSIMETRY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- COBALT 60; COMPUTERIZED TOMOGRAPHY; DOSIMETRY; ELECTROMAGNETIC RADIATION; ELECTROMETERS; EPITAXY; GAMMA RADIATION; MAMMARY GLANDS; PHOTON BEAMS; RADIATION DOSES; SILICON DIODES; X-RAY RADIOGRAPHY
- Descriptors DEC
- BEAMS; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; BODY; COBALT ISOTOPES; CRYSTAL GROWTH METHODS; DIAGNOSTIC TECHNIQUES; DOSES; ELECTRIC MEASURING INSTRUMENTS; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; EQUIPMENT; GLANDS; INDUSTRIAL RADIOGRAPHY; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MATERIALS TESTING; MEASURING INSTRUMENTS; MINUTES LIVING RADIOISOTOPES; NONDESTRUCTIVE TESTING; NUCLEI; ODD-ODD NUCLEI; ORGANS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TESTING; TOMOGRAPHY; YEARS LIVING RADIOISOTOPES