Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure

Highlights: • MoS₂/ZnO heterojunction p-n structure were fabricated by thermal evaporation and sol-gel methods. • Photoconductivity and photoresponsivity properties of ZnO/MoS₂ heterojunction p-n structure. • I–V rectifying behavior of ZnO/MoS₂ heterojunction p-n structure. The MoS₂/ZnO and MoS₂/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS₂/ZnO and MoS₂/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS₂ film was successfully grown on p-doped ZnO or Si. The TEM images of MoS₂/ZnO and MoS₂/Si heterojunction structures shows the MoS₂ stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS₂/ZnO and MoS₂/Si heterojunction structures as optoelectronic devices.